Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams.
نویسندگان
چکیده
We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M-I domain wall driven by Joule heating and the Peltier effect.
منابع مشابه
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ورودعنوان ژورنال:
- Nano letters
دوره 7 2 شماره
صفحات -
تاریخ انتشار 2007